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SQ4470EY
www.vishay.com
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
10
2.1
8
6
4
2
I D = 12 A
V D S = 30 V
1.8
1.5
1.2
0.9
I D = 5 A
V GS = 10 V
0
0
10
20 30 40
Q g - Total G ate Charge (nC)
Gate Charge
50
0.6
- 50 - 25 0 25 50 75 100 125 150
T - Junction Temperature ( ° C)
On-Resistance vs. Junction Temperature
175
100
10
1
T J = 150 ° C
0.05
0.04
0.03
0.1
0.01
T J = 25 ° C
0.02
0.01
T J = 150 ° C
T J = 25 ° C
0.001
0.0
0.2
0.4 0.6 0.8 1.0
V S D - S ource-to-Drain Voltage (V)
1.2
0.00
0
2
4 6 8
V GS - G ate-to- S ource Voltage (V)
10
0.5
Source Drain Diode Forward Voltage
80
On-Resistance vs. Gate-to-Source Voltage
0.1
- 0.3
- 0.7
- 1.1
- 1.5
I D = 250 μA
I D = 5 mA
77
74
71
68
65
I D = 1 mA
- 50 - 25
0
25
50
75
100
125
150
175
- 50 - 25
0 25 50 75 100 125
150
175
T J - Temperature ( ° C)
Threshold Voltage
T J - Junction Temperature ( ° C)
Drain Source Breakdown vs. Junction Temperature
S12-1845-Rev. C, 30-Jul-12
4
Document Number: 65673
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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